GaNAs alloy is grown by metalorganic chemical vapor deposition (MOCVD) using dimethylhydrazine (DMHy) as the nitrogen precursor.High resolution X ray diffraction (HRXRD) and secondary ion mass spectro metry (SIMS) are combined in determining the nitrogen contents in the samples.Room temperature photoluminescence (RTPL) measurement is also used in characterizing.The influence of different Ga precursors on GaNAs quality is investigated.Samples grown with triethylgallium (TEGa) have better qualities and less impurity contamination than those with trimethylgallium (TMGa).Nitrogen content of 5 688% is achieved with TEGa.The peak wavelength in RTPL measurement is measured to be 1278 5nm.
The refractive indices of disordered (Al xGa 1-x ) 0 51 In 0 49 P,which is grown by low-pressure organometallic vapor phase epitaxy and lattice-matched to GaAs substrate,have been determined by measuring their reflectance spectra when the wavelength ranges between 0 5 to 2 5 micrometer.A single-oscillator dispersion model is used to verify the experiment data and calculate the reflectance spectrum.The refractive indices are used to analyze the waveguide of strain quantum well GaInP/AlGaInP visible laser diode.The simulated far field pattern is consistent with the experimental results very well.
在Si(001)衬底上,以高质量的弛豫Ge薄膜作为缓冲层,先后生长Sn组分x分别为2.5%,5.2%和7.8%的完全应变的三层Ge_(1-x)Sn_x合金薄膜.在Si(001)衬底上直接生长了x分别为0.005,0.016,0.044,0.070和0.155的五个弛豫Ge_(1-x)Sn_x样品.通过卢瑟福背散射谱、高分辨X射线衍射和X射线倒易空间图等方法测量了Ge_(1-x)Sn_x合金的组分与晶格常数.实验得到的晶格常数相对Vegard定律具有较大的正偏离,弯曲系数b=0.211 A.
