Bi₂Se₃作为一种典型的拓扑绝缘体材料,具有独特的晶体结构和优异的光电特性,与传统导体和绝缘体不同,Bi₂Se₃在强自旋轨道耦合作用下,其表面存在特殊的量子态,不同自旋的电子呈反向运动,在众多材料中脱颖而出,近年来已成为新型光电材料领域的研究热点,广泛应用于光电探测、太阳能电池等众多光电子领域,因此对Bi2Se3的光电特性进行深入探究具有重要意义,基于此本文综述了Bi₂Se₃材料在光电领域的研究进展,详细阐述了其在光电探测器、太阳能电池、非线性光学和自旋光电子学四个层面所展现的独特性能,并对未来Bi₂Se₃在光电子领域的应用与研究进行了展望。As a typical topological insulator material, Bi₂Se₃ has a unique crystal structure and excellent optoelectronic properties, different from traditional conductors and insulators, Bi₂Se₃ has a special quantum state on its surface under the strong spin-orbit coupling, and the electrons of different spins are in reverse motion, which stands out among many materials, and in recent years, it has become a research hotspot in the field of new optoelectronic materials, and is widely used in many optoelectronic fields such as photoelectric detection and solar cells. Therefore, it is of great significance to conduct an in-depth exploration of the photoelectric characteristics of Bi₂Se₃. In this paper, the research progress of Bi₂Se₃ materials in the field of optoelectronics is reviewed, and its unique properties in photodetectors, solar cells, nonlinear optics and spin optoelectronics are elaborated, and the future application and research of Bi₂Se₃ in the field of optoelectronics are prospected.
硒化锡因其独特的层状晶体结构在新型热电材料领域备受瞩目,其兼具窄带隙、高光吸收系数等优异光电特性。值得注意的是,二维SnSe纳米片展现出独特的量子限域效应,其带隙可通过层数调控在1.1~2.1 eV范围内连续可调,这一特性使其在宽谱响应光电器件领域展现出巨大应用潜力。基于上述优势,SnSe材料体系已逐步从热电领域拓展至太阳能电池、光电探测器等前沿光电子器件研究,成为当前低维半导体材料研究的热点方向。本文系统阐释SnSe的晶体结构特征及其各向异性电子能带结构,重点梳理二维SnSe材料的主流制备技术,对于SnSe的掺杂调控策略进行了详细的介绍。详细的叙述了近年来SnSe基光伏器件与光电探测器件的实验研究进展。最后,总结了SnSe基光电器件的未来发展方向与面临的挑战。Tin Selenide (SnSe) has garnered significant attention in the field of novel thermoelectric materials due to its unique layered crystal structure, coupled with excellent optoelectronic properties such as a narrow bandgap and high optical absorption coefficient. Notably, two-dimensional SnSe nanosheets exhibit distinct quantum confinement effects, enabling continuous bandgap tuning from 1.1 to 2.1 eV by adjusting the layer number. This tunability endows SnSe with immense potential for applications in broad-spectrum-responsive optoelectronic devices. Leveraging these advantages, SnSe has gradually expanded from thermoelectric applications into frontier optoelectronic device research, including solar cells and photodetectors, establishing itself as a hotspot in low-dimensional semiconductor studies. This review systematically elucidates the crystal structure characteristics and anisotropic electronic band structure of SnSe, highlights mainstream preparation techniques for two-dimensional SnSe materials, and provides a detailed introduction to doping modulation strategies. Furthermore, it comprehensively reviews recent expe
