A novel band to band hot electron programming flash memory device,which features programming with high speed,low voltage,low power consumption,large read current and short access time,is proposed.The new memory cell is programmed by band to band tunneling induced hot electron (BBHE) injection method at the drain,and erased by Fowler Nordheim tunneling through the source region.The work shows that the programming control gate voltage can be reduced to 8V,and the drain leakage current is only 3μA/μm.Under the proposed operating conditions,the program efficiency and the read current rise up to 4×10 -4 and 60μA/μm,respectively,and the program time can be as short as 16μs
