We investigate the growth of InP-on-GaAs combined with the advantages of double low-temperature （LT） buffers and strained layer surperlattices （SLSs）. It is found that LT-InP/LT-GaAs double LT buffers are more effective for strain accommodation than a LT-InP single buffer in InP-on-GaAs. On the other hand, there is an optimal thickness for LT-GaAs for a given thickness of the LT-InP layer,at which the double LT buffers can reach the best state for strain ad- justment. Furthermore,the position of insertion of SLSs should be carefully designed because the distance above the InP/ buffer interface plays an important role in threading dislocation interactions for dislocation reduction. As a result, the density of threading dislocations in the InP epilayer is markedly reduced. X-ray diffraction measurements show that the full width at half maximum of the ω/2θ rocking curve for the 2μm-thick InP epilayer is less than 200.
为研究大黄鱼鱼卵的最佳腌制工艺,通过单因素实验考察食盐种类、食盐添加量、腌制时间以及腌制温度对大黄鱼鱼卵腌制过程中氯化物含量、挥发性盐基氮(TVB-N)含量、水分含量、菌落总数、色泽以及质构特性的影响,并进行了感官评价。在此基础上,以感官评价及菌落总数为响应值,通过响应面法优化了大黄鱼鱼卵腌制工艺。结果显示,细盐腌制的鱼卵TVB-N含量和菌落总数均低于粗盐腌制的鱼卵;在食盐添加量为10%时,L*值最高,有较好的感官品质;腌制温度5℃时,硬度及咀嚼性适宜,菌落总数符合相关标准;腌制55 d时,菌落总数较低,感官评价分数最高。得到的大黄鱼鱼卵腌制最佳工艺为:食盐添加量10.69%、腌制温度5.0℃、腌制时间55.51 d。在此条件下,腌制大黄鱼鱼卵感官评分为82.50分,菌落总数为5.32 lg CFU/g。获得的鱼卵腌制品具有良好的食用品质。
