A one-dimensional continuous analytic potential solution to a generic oxide-silicon^xide system is developed. With the analytic solution, the potential distribution in the silicon film is predicted. A physics-based relation between surface potentials is also derived and then applied to the generic oxide-silicon-oxide metal oxide-semiconductor field-effect transistors （MOSFETs） for the calculation of surface potentials
The linear cofactor difference operator（LCDO） method,a direct parameter extraction method for general diodes,is presented.With the developed LCDO method,the extreme spectral characteristic of the diode voltage-current curves is revealed,and its extreme positions are related to the diode characteristic parameters directly.The method is applied to diodes with different sizes and temperatures,and the related characteristic parameters,such as reverse saturation current,series resistance and non-ideality factor,are extracted directly.The extraction result shows good agreement with the experimental data.
