光互连是突破传统微电子IC性能瓶颈的重要技术手段,对推进"后摩尔时代"微电子技术的发展和高性能计算技术的实现具有关键性意义。本文在归纳总结不同层次光互连结构特点的基础上,对片上光互连(on-chip or intra-chip optical interconnects)所涉及的若干种无源光子集成器件的设计制备及性能特点进行了分析介绍,这些器件包括SOI亚波长光子线波导、SOI光子晶体波导、MMI分束/合束器、微环/微盘谐振腔滤波器、光子晶体微腔耦合滤波器、光子晶体反射镜等,是硅基片上光互连的基本构成单元。本文对这些关键性光子集成器件的国内最新研究进展进行了报道。
A 2 × 2 electro-optic switch is experimentally demonstrated using the optical structure of a Mach-Zehnder interferometer （MZI） based on a submicron rib waveguide and the electrical structure of a PIN diode on silicon-on-insulator （SOI）. The switch behaviour is achieved through the plasma dispersion effect of silicon. The device has a modulation arm of 1 mm in length and cross-section of 400 nm×340 nm. The measurement results show that the switch has a VπLπ figure of merit of 0.145 V.cm and the extinction ratios of two output ports and cross talk are 40 dB, 28 dB and -28 dB, respectively. A 3 dB modulation bandwidth of 90 MHz and a switch time of 6.8 ns for the rise edge and 2.7 ns for the fall edge are also demonstrated.
