A high open-circuit voltage betavoltaic microbattery based on a GaN p-i-n diode is demonstrated.Under the irradiation of a 4×4 mm^(2) planar solid 63Ni source with an activity of 2 mCi,the open−circuit voltage Voc of the fabricated single 2×2 mm^(2) cell reaches as high as 1.62 V,the short−circuit current density Jsc is measured to be 16nA/cm^(2).The microbattery has a fill factor of 55%,and the energy conversion efficiency of beta radiation into electricity reaches to 1.13%.The results suggest that GaN is a highly promising potential candidate for long-life betavoltaic microbatteries used as power supplies for microelectromechanical system devices.
