We have proposed a method to separate Rashba and Dresselhaus spin splittings in semiconductor quantum wells by using the intrinsic Hall effect. It is shown that the interference between Rashba and Dresselhaus terms can deflect the electrons in opposite transverse directions with a change of sign in the macroscopic Hall current, thus providing an alternative way to determine the different contributions to the spin-orbit coupling.
Quantum-state engineering, i.e. active manipulation over the coherent dynamics of suitable quantum-mechanical systems, has become a fascinating prospect of modern physics. Here we discuss the dynamics of two interacting electrons in a coupled quantum dot driven by an external electric field. The results show that the two quantum dots can be used to prepare a maximally entangled Bell state by changing the strength and duration of an oscillatory electric field. Different from the suggestion made by Loss et al (1998 Phys. Rev. A 57 120), the present entanglement involves the spatial degree of freedom for the two electrons. We also find that the coherent tunnelling suppression discussed by Grossmann et al (1991 Phys. Rev. Lett. 67 516) persists in the two-particle case: i.e. two electrons initially localized in one dot can remain dynamically localized, although the strong Coulomb repulsion prevents them from behaving so. Surprisingly, the interaction enhances the degree of localization to a large extent compared with that in the non-interacting case. This phenomenon is referred to as the Coulomb-enhanced dynamical localization.
A systematic study of the Hugoniot equation of state, phase transition, and the other thermodynamic properties including the Hugoniot temperature, the electronic and ionic heat capacities, and the Gruneisen parameter for shockcompressed BeO, has been carried out by calculating the total free energy. The method of calculations combines first-principles treatment for 0 K and finite-T electronic contribution and the mean-field-potential approach for the vibrational contribution of the lattice ion to the total energy. Our calculated Hugoniot is in good agreement with the experimental data.
The anomalous Hall effect of heavy holes in semiconductor quantum wells is studied in the intrinsic transport regime, where the Berry curvature governs the Hall current properties. Based on the first-order perturbation of wave function the expression of the Hall conductivity the same as that from the semiclassical equation of motion of the Bloch particles is derived. The dependence of Hall conductivity on the system parameters is shown. The amplitude of Hall conductivity is found to be balanced by a competition between the Zeemaa splitting and the spin-orbit splitting.