We introduce a novel 2 T P-channel nano-crystal memory structure for low power and high speed embedded non-volatile memory（NVM） applications.By using the band-to-band tunneling-induced hot-electron （BTBTIHE） injection scheme,both high-speed and low power programming can be achieved at the same time. Due to the use of a select transistor,the ＂erased states＂ can be set to below 0 V,so that the periphery HV circuit （high-voltage generating and management） and read-out circuit can be simplified.Good memory cell performance has also been achieved,including a fast program/erase（P/E） speed（a 1.15 V memory window under 10μs program pulse）,an excellent data retention（only 20%charge loss for 10 years）.The data shows that the device has strong potential for future embedded NVM applications.
