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国家自然科学基金(s11364025)

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Lattice structures and electronic properties of CIGS/CdS interface:First-principles calculations被引量:2
2014年
Using first-principles calculations within density functional theory, we study the atomic structures and electronic properties of the perfect and defective (2VCu+ Incu) CulnGaSe2/CdS interfaces theoretically, especially the interface states. We find that the local lattice structure of (2VCu+ InCu) interface is somewhat disorganized. By analyzing the local density of states projected on several atomic layers of the two interfaces models, we find that for the (2VCu+InCu) interface the interface states near the Fermi level in CulnGaSe2 and CdS band gap regions are mainly composed of interracial Se-4p, Cu-3d and S-3p orbitals, while for the perfect interface there are no clear interface states in the CulnGaSe2 region but only some interface states which are mainly composed of S-3p orbitals in the valance band of CdS region.
汤富领刘冉薛红涛路文江冯煜东芮执元黄敏
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