Al2O3and HfO2thin films are separately deposited on n-type InAlAs epitaxial layers by using atomic layer deposition(ALD).The interfacial properties are revealed by angle-resolved x-ray photoelectron spectroscopy(AR-XPS).It is demonstrated that the Al2O3layer can reduce interfacial oxidation and trap charge formation.The gate leakage current densities are 1.37×106A/cm2and 3.22×106A/cm2at+1V for the Al2O3/InAlAs and HfO2/InAlAs MOS capacitors respectively.Compared with the HfO2/InAlAs metal-oxide-semiconductor(MOS) capacitor,the Al2O3/InAlAS MOS capacitor exhibits good electrical properties in reducing gate leakage current,narrowing down the hysteresis loop,shrinking stretch-out of the C-V characteristics,and significantly reducing the oxide trapped charge(Qot) value and the interface state density(Dit).
The prospect ofα-Ga2O3 in optical and electrical devices application is fascinating.In order to obtain better performance,Ge and F elements with similar electronegativity and atomic size are selected as dopants.Based on density functional theory(DFT),we systematically research the electronic structure and optical properties of dopedα-Ga2O3 by GGA+U calculation method.The results show that Ge atoms and F atoms are effective n-type dopants.For Ge-dopedα-Ga2O3,it is probably obtained under O-poor conditions.However,for F-dopedα-Ga2O3,it is probably obtained under O-rich conditions.The doping system of F element is more stable due to the lower formation energy.In this investigation,it is found that two kinds of doping can reduce theα-Ga2O3 band gap and improve the conductivity.What is more,it is observed that the absorption edge after doping has a blue shift and causes certain absorption effect on the visible region.Through the whole scale of comparison,Ge doping is more suitable for the application of transmittance materials,yet F doping is more appropriate for the application of deep ultraviolet devices.We expect that our research can provide guidance and reference for preparation ofα-Ga2O3 thin films and photoelectric devices.
A hydrogen-plasma-etching-based plasma-enhanced chemical vapor deposition(PECVD)synthesis route without metal catalyst for preparing the graphene films on flexible glass is developed.The quality of the prepared graphene films is evaluated by scanning electron microscopy,x-ray photoelectron spectroscopy,high-resolution transmission electron microscopy,ultraviolet-visible spectroscopy,and electrochemical measurements.In a radio frequency(RF)power range of 50 W-300 W,the graphene growth rate increases with RF power increasing,while the intensity ratio of D-to G-Raman peak(I_(D)/I_(G))decreases.When the RF power is higher than 300 W,the I_(D)/I_(G)rises again.By optimizing experimental parameters of hydrogen plasma etching and RF power,the properties of as-prepared flexible graphene on glass are modulated to be able to achieve the graphene's transparency,good electrical conductivity,and better macroscopic uniformity.Direct growth of graphene film without any metal catalyst on flexible glass can be a promising candidate for applications in flexible transparent optoelectronics.
Rui-Xia MiaoChen-He ZhaoShao-Qing WangWei RenYong-Feng LiTi-Kang ShuBen Yang
