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国家自然科学基金(s10778602)

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Nb_5N_6 thin film on silicon and silicon oxide: A good material for terahertz detection被引量:5
2009年
Voltage responsivity of bolometer will benefit from high temperature coefficient of resistance (TCR) of the material. The Nb5N6 thin solid films we proposed in this paper have high TCR, compared with the commonly-used materials such as Nb and Bi. The films were sputtered on Si(100), SiO2/Si(100), SiO2 substrates by using radio frequency (rf) magnetron sputtering. The deposition conditions have been optimized to get high TCR. The highest TCR is over 0.91% K-1 at 300 K and up to 4.5% K -1―7% K-1 at 78 K, which is good enough to be used in terahertz detection and thermometer fabrication in the range from 78 K to 300 K.
LU XueHui HE Ning KANG Lin CHEN Jian JIN BiaoBing WU PeiHeng
关键词:常用材料SI(100)电阻温度系数
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