We investigate the amplified spontaneous emission （ASE） from an Ag-backed poly[2-methoxy-5-（2＇-ethylhexyloxy）- 1,4-phenylenevinylene] （MEH-PPV） film with different film thicknesses. The ASE characteristics of Ag-backed MEH- PPV films with different thicknesses show that increasing the film thickness can reduce the influence of the Ag cladding. The threshold, the gain, and the loss of the device with a thickness of 170 nm are comparable to those of a metal-free device. The lasing threshold of this device is about 7.5 times that of a metal-free device. Our findings demonstrate that Ag-backed MEH-PPV film with an appropriate thickness can still be a good polymer gain material for the fabrication of solid-state lasers.
We report on white organic light-emitting diodes （WOLEDs） based on polyvinylcarbazole （PVK） doped with 1,1-bis（（di-4-tolylamino）phenyl）cyclohexane （TAPC） and perylene, and investigate the luminescence mechanism of the devices. The chromaticity of light emission can be tuned by adjusting the concentration of the dopants. White light with the Commission Internationale de L＇Eclairage （CIE） coordinates of （0.33, 0.34） is achieved by mixing the yellow electromer emission of TAPC and the blue monomer emission of perylene from the device ITO/PVK： TAPC： perylene （100：9：1 in wt.） （100 nm）/tris-（8-hydroxyquinoline aluminum （Alq3） （10 nm）/A1. The device exhibits a maximal luminance of 3727 cd/m2 and a current efficiency of 2 cd/A.
In this work, performance enhancements of amplified spontaneous emission （ASE） from poly[2-methoxy-5-（2＇- ethyl-hexyloxy）-l,4-phenylene vinylene] （MEH-PPV） have been achieved via solvent vapour treatment. Correlations between the morphology of the film and the optical performance of polymer-based ASE are investigated. The active layers are characterised by atomic force microscopy and optical absorption. The results show that the solvent-vapour treatment can induce the MEH-PPV self-organisation into an ordered structure with a smooth surface, leading to enhanced optical gain. Thus the solvent-vapour treatment is a good method for improving the optical properties of the MEH-PPV.
In this work, enhanced poly（3-hexylthiophene）：[6,6]-phenyl-C61-butyric acid methyl ester （P3HT：PCBM） bulk- heterojunction photovoltaic devices are achieved via slow-solvent-vapour treatment. The correlations between the morphology of the active layer and the photovoltaic performance of polymer-based solar cell are investigated. The active layers are characterized by atomic force microscopy and optical absorption. The results show that slow-solvent- vapour treatment can induce P3HT self-organization into an ordered structure, leading to the enhanced absorption and efficient charge transport.
We investigate the effect of a metallic electrode on the ability for poly[2-methoxy-5-（2＇-ethylhexyloxy）-1,4- phenylene vinylene] （MEH-PPV） film to undergo amplified spontaneous emission （ASE）. The threshold of the device with Ag cladding is about 10 times greater than that of a metal-free device, but metal such as Al completely shuts off ASE. The ASE recurs when a thin spacer layer, such as a few nanometers of SiO2, is introduced between the MEH-PPV film and the Al cladding. Compared with the Cu or Al electrode, the Ag cladding is most suited to serve as an electrode with its low optical loss due to its high work-function and reflectivity.
The surface plasmonic effect and scattering effect of gold nanorods(AuNRs) on the performance of bulk heterojunction photovoltaic devices based on the blend of polythiophene and fullerene are investigated.AuNRs enhance the excitation since the plasmonic effect increases the electric field,mainly in the area near the interface between the active layer and AuNRs.The results show that the incident photo-to-electron conversion efficiency(IPCE) obviously increases for the device with a layer of gold nanorods,resulting from the plasmonic effect of AuNRs in the range of 500-670 nm and the scattering effect in the range of 370-410 nm.The power conversion efficiency(PCE) is increased by 7.6% due to the near field effect of the localized surface plasmons(LSP) of AuNRs and the scattering effect.The short circuit current density is also increased by 9.1% owing to the introduction of AuNRs.However,AuNRs can cause a little deterioration in open circuit voltage.
