We report on the fabrications and characterizations of axial and radial Ga As nanowire pn junction diode arrays.The nanowires are grown on n-doped Ga As（111）B substrates using the Au-catalyzed vapor–liquid–solid mechanism by metal–organic chemical vapor deposition（MOCVD）. Diethyl–zinc and silane are used as p- and n-type dopant precursors,respectively. Both the axial and radial diodes exhibit diode-like J–V characteristics and have similar performances under forward bias. Under backward bias, the axial diode has a large leakage current, which is attributed to the bending of the pn junction interface induced by two doping mechanisms in Au-catalyzed nanowires. The low leakage current and high rectification ratio make the radial diode more promising in electrical and optoelectronic devices.
A high-contrast grating（HCG） focusing reflector providing phase front control of reflected light and high reflectivity is proposed and fabricated.Basic design rules to engineer this category of structures are given in detail.A 1550 nm TM polarized incident light of 11.86 mm in focal length and 0.8320 in reflectivity is obtained in experiment.The wavelength dependence of the fabricated HCGs from 1530 nm to 1580 nm is also tested.The test results show that the focal length is in the range of 11.81-12 mm,which is close to the designed focal length of 15 mm.The reflectivity is almost above 0.56 within a bandwidth of 50 nm.At a distance of 11.86 mm,the light is focused to a round spot with the highest concentration,which is much smaller than the size of the incident beam.The FWHM of the reflected light beam decreases to 120 nm,and the intensity increases to 1.18.
Some important insights into the electron-states-architecture (ESA) and its dimensionality (from 3 to 0) in a semiconductor (or generally crystalline) material are obtained. The self-consistency of the set of density of states (DOS) expressions with different dimensionalities is remediated through the clarification and rearrangement of the wave-function boundary conditions for working out the eigenvalues in the wave vector space. The actually too roughly observed and theoretically unpredicted critical points for the dimensionality transitions referring to the integer ones are revealed upon an unusual assumption of the intrinsic energy-level dispersion (ELD). The ELD based quantitative physical model had been established on an immediate instinct at the very beginning and has been properly modified afterwards. The uncertainty regarding the relationship between the de Broglie wavelength of electrons and the dimensionality transitions, seeming somewhat mysterious before, is consequentially eliminated. The effect of the material dimensions on the ELD width is also predicted and has been included in the model. The continuous evolution of the ESA dimensionality is convincingly and comprehensively interpreted and thus the area of the fractional ESA dimensionalities is opened. Another new assumption of the spatial extension shrinkage (SES) closely related to the ELD has also been made and thus the understanding of the behavior of an electron or, in a general sense, a particle has become more comprehensive. This work would manifest itself a new basis for further development of nanoheterostructures (or low dimensional heterostructures including the quantum wells, quantum wires, quantum dots and especially the hetero-dimensional structures). Expected should also be the possible inventions of some novel electronic and optoelectronic devices. More basically, it leads to a new quantum mechanical picture, the essential modifications of Schrödinger equation and Newtonian equation that give rise to a full cosmic-scope picture
Pure zinc blende structure GaAs/AlGaAs axial heterostructure nanowires （NWs） are grown by metal organic chemical vapor deposition on GaAs（111） B substrates using Au-catalyzed vapor-liquid-solid mechanism. Al adatom enhances the influence of diameters on NWs growth rate. NWs are grown mainly through the contributions from the direct impingement of the precursors onto the alloy droplets and not so much from adatom diffusion. The results indicate that the droplet acts as a catalyst rather than an adatom collector.
Zinc blende structure GaAs/AlGaAs core-multishell nanowires(NWs)are grown on a GaAs(111)B substrate by a two-temperature process using an Au-catalyzed vapor-liquid-solid mechanism and metal organic chemical vapor deposition,respectively.Defect-free radial heterostructure NWs are formed.It can be concluded that the NWs are grown with the main contributions from the direct impingement of the precursors onto the alloy droplets and little from adatom diffusion.The results indicate that the droplet acts as a catalyst rather than an adatom collector.The photoluminescence spectra reveal that the grown NWs have much higher optical efficiency than bare GaAs NWs.
We fabricate a GaAs-based InGaAs/InGaAsP multiple quantum wells （MQWs） laser at 1.55 pm. Using two-step growth method and thermal cyclic annealing, a thin low-temperature InP layer and a thick InP buffer layer are grown on GaAs substrates by low-pressure metal organic chemical vapor deposition technology. Then, high- quality MQWs laser structures are grown on the InP buffer layer. Under quasi-continuous wave （QCW） condition, a threshold current of 476 mA and slope efficiency of 0.15 mW/mA are achieved for a broad area device with 50 μm wide strip and 500 μm long cavity at room-temperature. The peak wavelength of emission spectrum is 1549.5 nm at 700 mA. The device is operating for more than 2000 h at room-temperature and 600 mA.
